Application of organic silicon cluster to patter transfer process for deep UV lithography

In this paper, organic silicon cluster is investigated as bottom anti-reflective coating (BARC) material compatible with the RIE mask for the substrate(oxide) etch in a thin resist process for deep UV lithography. It can be simply spin-coated and suppress reflection by single layer BARC process. Excellent etch properties closer to a-Si, namely high etch selectivity of resist:BARC during BARC etch and great etch resistance without deformation during oxide etch, are achieved.