Effects of H/sub 2/ addition in magnetized inductively coupled C/sub 2/F/sub 6/ plasma etching of silica aerogel film

Low-k dielectrics not only lower line-to-line capacitance, but also reduce cross-talk noise in the interconnect and alleviate power dissipation issues. Silica aerogel film is a promising candidate for low-k interlevel dielectrics by its ca. 70% porosity. As one of manufacture processes, etching behavior was considered with the increasing of H/sub 2/ gas addition to C/sub 2/F/sub 6/ gas.