Study and Analysis of Environmental Issues for Scaled Version of Si-Ge Heterojunction Bipolar Transistor

Nowadays Si-Ge HBTs are playing an important role in the field of RF and microwave applications. Also Scaling of a device is an advance fashion in the innovation. In this paper, we have scaled the Si-Ge HBT using scaling techniques and studied the behavior of the RF performance parameters of the DUT before scaling and after scaling with Ge content in base region.