Corner and Statistical SPICE Model Generation for Shielded-Gate Trench Power MOSFETs Based on Backward Propagation of Variance

This paper proposes a novel physical approach to corner and statistical SPICE model generation for Shielded-Gate Trench Power MOSFETs. The technique is derived from the mature IC industry standard approach known as Backward Propagation of Variance. Physically based, scalable SPICE models for the device are required to implement the technique. The methodologies presented are applicable to other power discrete devices such as super-junction MOSFETs, SiC MOSFETs, GaN HEMTs, and Trench IGBTs.