A Sub-2 dB NF, 0.3–3 GHz Packaged Bandwidth Extended Wideband Receiver Front-End

This brief presents a sub-2 dB noise figure (NF) packaged wideband receiver front-end for high sensitivity multi-standard radio. An inductive source degeneration technique with a low-V
_T
CMOS transistor is adopted in composite pair low noise amplifier (CPLNA) to extend the bandwidth and to improve the NF, a current commutating multi-gate transistor pair (MGTR) down conversion passive mixer for better linearity of the packaged receiver. Fabricated in 65 nm CMOS technology, the receiver provides a maximum conversion voltage gain of 37 dB and NF of 1.85-2 dB with a 3 dB bandwidth from 0.3 GHz to 3 GHz in quad-flat no-leads (QFN) package. The receiver has a third-order intermodulation intercept point (IIP3) of -7 dBm at 2 GHz and consumes a 44.5 mW power (LNA + Mixer).