Experimental Study on Effects of Boron Transient Enhanced Diffusion on Channel Size Dependences of Low Frequency Noise in NMOSFETs

The effects of boron transient enhanced diffusion (TED) on channel size dependences of low frequency noise (LFN) in NMOSFETs were investigated. In case of wide gate width, as gate length became shorter, LFN characteristics were degraded by higher boron concentration near the extension edges. LFN characteristics of narrow channel devices were degraded by lower boron concentration near the active corners where interface state density was higher than the channel center. These results can be understood by the degree of channel percolation induced by boron TED.