eNVM MRAM Retention Reliability Modeling in 22FFL FinFET Technology

Assessing product-level retention performance of a perpendicular spin-transfer torque magnetic random access memory (STT-MRAM, or MRAM for short) for non-volatile applications requires extrapolation of retention data measured on a relatively small number of units at high temperatures and short times, to defects-per-million units (DPM) level failure probabilities at low temperatures and long times. This paper discusses the observed time and temperature scaling relationships for both the parallel and anti-parallel magnetic states, and proposes empirically-based models and methods for extrapolation, with some measure of built-in conservatism.