Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs

Simulations of hot-carrier degradation of nanowire field-effect transistors are reported. The simulations rely on the carrier energy distribution function, obtained by solving the Boltzmann transport equation. To model the contribution of impact ionization, the hydrodynamic scheme is employed. A range of pertinent physical mechanisms is invoked and discussed to adequately reproduce HCD measurements in the full ( V
_g
, V
_d
) bias space. Impact ionization is discussed as an important ingredient of HCD at low gate, high drain voltages.