The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier

We report on the super-lattice castellated field-effect transistor (SLCFET) device architecture whose unique geometry enables new scaling and optimization strategies for RF power and performance. Measured transistor values show excellent potential for both power and low-noise amplification applications. With I
_DS
> 1.8 A/mm, f
_T
= 47 GHz, and f
_max
= 124 GHz, we are able to demonstrate P
_out
6 W/mm, PAE 45%, and OIP3/PDC = 6 dB at 30 GHz.