Improving Post-Cycling Low Resistance State Retention in Resistive RAM With Combined Oxygen Vacancy and Copper Filament

We report for the first time, an improvement in post-cycling low resistance state retention of oxide-based resistive RAM devices by injecting copper into the oxygen vacancy conducting filament. Through first principle simulations, we find that copper encounters a larger population of high kinetic diffusion barriers than oxygen vacancies resulting in an improved low resistance state retention.