Efficient Magnetic Domain Nucleation and Domain Wall Motion With Voltage Control Magnetic Anisotropy Effect and Antiferromagnetic/Ferromagnetic Coupling

The magnetic domain is a promising solution for realizing the next-generation information storage, for example, racetrack memory (RM). However, domain nucleation and domain wall (DW) motion are limited by the magnetic tunnel junctions (MTJs) as the write and read heads. Moreover, the size of a single domain limits the further increase in storage density. In this paper, we report a cross structure for efficient magnetic domain manipulations. With the help of voltage control magnetic anisotropy (VCMA) effect and antiferromagnetic/ferromagnetic (AFM/FM) couplings, a fast, low-power, and highly reliable nucleation can be achieved. We also miniaturize the domain size by applying a voltage on the nanowire, increasing the storage density. An optimized RM device is then proposed combining the data detection via the inverse spin Hall effect (ISHE). The proposed device facilitates the development of high-speed, low power consumption, and high-density RM applications.