Charge-Based Compact Modeling of Capacitances in Staggered OTFTs

This paper introduces a charge-based approach to model the total charges and the capacitances in staggered organic thin-film transistors (OTFTs). The charges are calculated by integrating over the charge density per gate area along the whole channel. The charges associated with the drain and source terminals are yielded by applying a linear charge partitioning scheme. A series of substitutions is done so that finally the total charges can be calculated in dependence on the charge densities at the drain/source end of the channel. The equations are implemented in an already existing DC compact model. For verification purposes TCAD simulation data and measurements are used. The compact model shows a good agreement with TCAD data and also agrees with measurement data to a certain degree. The advantage of the model is that it has one unique formulation that covers all operation regimes and it is physics-based.