Origin of the Negative Differential Resistance in the output characteristics of a picene-based Thin-Film Transistor

In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm
²
/V·s) and on/off ratios above 10
⁵
, the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.