Model for the evolution of dislocation loops in silicon

A single statistical point defect based model for the evolution of dislocation loops during oxidation and annealing under an inert ambient is developed. The model assumes that the radius and the density of the dislocation loops follow a log normal distribution. The capture or emission rate of interstitials bounded by the dislocation is proportional to the rates of emission and absorption of point defects at the loop boundaries modulated by a log normal loop distribution function. The model also incorporates the stress due to dislocation loops. Published data on loop evolution and distribution under oxidation and inert ambient annealing conditions are used to calibrate the loop model.