Modeling of initial stages of annealing for amorphizing arsenic implants

We have analyzed the initial stages of annealing for amorphizing arsenic implants. The comparison of transient enhanced diffusion (TED) simulations to experimental data shows results that appear inconsistent with the standard assumption of complete removal of point defects from the regrown amorphized layer. Our analysis suggests that high arsenic concentrations may stabilize retention of vacancies during solid phase epitaxial regrowth and thereby lead to the formation of a vacancy-rich layer near the surface within the regrown region. The presence of this vacancy rich layer helps to account for both increased initial diffusion within the peak region for high temperature annealing and increased clustering in the peak region for lower temperatures.