Modeling of boron deactivation/activation kinetics during ion implant annealing

Boron transient enhanced diffusion (TED) is characterized by enhanced tail diffusion coupled with an electrically inactive immobile peak associated with the clustering of boron in the presence of excess interstitials. A consistent model for process simulation has to account for the formation of a variety of agglomerates associated with the excess point defect concentrations following ion implantation. These include interstitial clusters (e.g. {311} defects), vacancy clusters and dopant/interstitial clusters (e.g. boron interstitial clusters). In addition to the chemical profiles (SIMS), it is essential to also predict electrical activation behavior. Hence, in this work we investigate models for boron deactivation and subsequent activation during annealing.