Simulation of gallium-arsenide based high electron mobility transistors

We present results for hydrodynamic simulations of pseudomorphic AlGaAs-InGaAs-GaAs high electron mobility transistors (HEMTs) obtained by the MINIMOS-NT two-dimensional device simulator. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between l/sub g/=140 nm and l/sub g/=300 nm is carried out. Several aspects, including thermal and breakdown effects, the insulator-semiconductor interface, and the Schottky contact are considered.