A multi-scale simulation study for optimization and variability evaluation of molecular based flash cell

This paper presents computational simulation of a conceptual low power non-volatile memory cell based on inorganic molecular metal oxide clusters (polyoxometalates (POM)). The storage media is embedded in the gate dielectric of a Fully Depleted Silicon On Insulator (FDSOI) device. The simulations are carried out using a multi-physics simulation framework, which allows us to evaluate the variability in the programming window of the molecular based flash cell with an 18 nm gate length. We have focused our study on the threshold voltage variability influenced by random dopant fluctuations and random special fluctuations of the molecules in the floating gate of the flash-cell. Our simulation framework and conclusions can be applied not only to the POM-based flash cell but also to flash cells based on alternative molecules used as a storage media.