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A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor | IEEE Journals & Magazine | IEEE Xplore

A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor


Abstract:

We report the first demonstration of Nitrogen polar (N-polar) GaN current aperture vertical electron transistor with a blocking electric field over 2.9 MV/cm. The devices...Show More

Abstract:

We report the first demonstration of Nitrogen polar (N-polar) GaN current aperture vertical electron transistor with a blocking electric field over 2.9 MV/cm. The devices were grown by metalorganic chemical vapor deposition on a c-plane sapphire substrate. The fabrication involved a maskless planar regrowth of a very thin-AlN layer above the current blocking layer, which induced a two-dimensional electron gas (2DEG) in the channel, and also prevented the out-diffusion of activated Mg ions into the GaN channel layer. The alloyed source and drain ohmic contacts on the regrown n+-GaN layer offered the low-contact resistance of 0.18 \text{m}\Omega \cdot \text {cm}^{2} ( 0.22~\Omega \cdot \text {mm} ). The device displayed a maximum drain current of 1.68kA/cm2 with a low RON, SP of 2.48 \text{m}\Omega \cdot \text {cm}^{2} . With just about 200 nm drift layer, a three-terminal breakdown voltage of 58 V was achieved. The output characteristics were free of dispersion under pulsed measurements with 80~\mu \text{s} and 500 ns pulse widths. The N-polar current aperture vertical electron transistors show fundamentally significant advantages in favor of using Mg2+-implanted GaN as current blocking layers compared with Ga-polar counterparts.
Published in: IEEE Electron Device Letters ( Volume: 40, Issue: 6, June 2019)
Page(s): 885 - 888
Date of Publication: 01 May 2019

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