Direct Digital Synthesizer with 14 GS/s Sampling Rate Heterogeneously Integrated in InP HBT and GaN HEMT on CMOS

A 14 GS/s direct digital synthesizer (DDS) heterogeneously integrated with InP and GaN on CMOS is presented. The DDS includes over 6 million 45 nm CMOS FETs, 2151 InP HBTs, 2 GaN HEMTs, and 9930 heterogeneous interconnects, making it the most complex heterogeneously integrated mixed-signal circuit reported to date. By heterogeneously integrating multiple technologies, a high output power of 6.9 dBm is achieved while maintaining better than 37 dBc Nyquist SFDR and 8.7 W power consumption – performance currently unachievable with state-of-the-art single-technology approaches.