22nm Ultra-Thin Body and Buried Oxide FDSOI RF Noise Performance

The drastic downscaling of the transistor size along with advances in material sciences allowed the development of low power CMOS technologies with competitive RF figure of merits suitable for millimeter applications. In this context, this paper presents the RF and noise characterization (up to 110 GHz) of an advanced 22 nm UTBB FDSOI technology developed by Globalfoundries. In addition to the excellent DC performance, the technology presents promising RF characteristics. Indeed, a maximum transconductance of 1.78 S/mm and a F
_max
of 435 GHz are achieved. The technology also offers a state-of-the-art minimum noise figure (NF
_min
) of 0.45 dB at 20 GHz (with an associated Gain of 13 dB) for a drain current of 185 mA/mm.