Recent Developments on SiGe BiCMOS Technologies for mm-wave and THz Applications

In this paper, the latest developments of high performance SiGe BiCMOS technologies with additional WLP technology modules are demonstrated. The combination of HBTs with f
_max
values beyond 700 GHz together with WLP technology modules such as interposer, Through-Silicon Vias (TSVs) and wafer bonding techniques are explained. Both silicon interposer substrates with embedded TSVs together with a novel Al-Al wafer bonding integration technique are realized to provide a high performance and low-cost FOWLP platform for 3D heterogeneous integration.