Resonant Tunneling Diode Photodetectors for Mid-Infrared Gas-Sensing Based on GaSb Substrate

We fabricated resonant tunneling diode photodetectors with a GaInAsSb absorption layer and a GaAsSb/AlAsSb double barrier. The detector cut-off wavelength is
$3.5\ {\mu \text{m}}$
and reaches a peak sensitivity of 0.85 A/W at 2004 nm.