2 D-hydrodynamic energy model including avalanche breakdown phenomenon for power field effect transistors

Breakdown phenomenon constitutes one of the main limitations of Field Effect Transistors (FETs) for power applications. In order to study the avalanche phenomenon, a 2 D hydrodynamic energy model has been carried out. It includes the specific physical limitations inherent in submicron gate length devices and makes it possible the breakdown phenomenon behaviour and the voltage breakdown determination for gate recessed topology devices close to experiment making.