UTC-PD-Integrated HEMT for Optical-to-Millimeter-Wave Carrier Frequency Down-Conversion

We newly developed an InGaAs-channel high-electron-mobility transistor (HEMT) integrated with a uni-traveling-carrier photodiode (UTC-PD) structure as a carrier frequency down-converter from optical data signals to wireless data signals, which utilizes the photonic double-mixing functionality. It was demonstrated that the output intensity of the down-converted millimeter-wave signal is significantly enhanced by 34 dB compared with a standard HEMT, owning to the integration of the UTC-PD structure. We also verify the feasibility of the UTC-PD-integrated HEMT for practical use in the future full coherent networks.