Temperature Effects on the Total Ionizing Dose Response of TaOx-based Memristive Bit Cells

The effects of temperature on the total ionizing dose (TID) response of tantalum oxide (TaO
_x
) memristive bit cells are investigated. The TaO
_x
devices were manufactured by Sandia National Laboratories (SNL). In-situ data were obtained as a function of temperature, accumulated dose, and bias at the Gamma Irradiation Facility (GIF). The data indicate that devices reset into the high resistance off-state exhibit decreases in resistance when the temperature is increased. However, an increased susceptibility to TID at elevated temperatures was not observed.