Multi-MGy Total Ionizing Dose Induced MOSFET Variability Effects on Radiation Hardened CMOS Image Sensor Performances

MOSFETs variability in irradiated CIS up to 10 MGy(SiO
₂
) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.