Abstract:
High-quality epitaxial (111) BaTiO3 thin film was successfully fabricated on flexible fluorophlogopite mica substrate by radio frequency magnetron sputtering. The flexibl...Show MoreMetadata
Abstract:
High-quality epitaxial (111) BaTiO3 thin film was successfully fabricated on flexible fluorophlogopite mica substrate by radio frequency magnetron sputtering. The flexible BaTiO3 thin-film element shows observably stable ferroelectric properties with the bending radius of 4 mm and well-mechanical fatigue resisting performance with 104 bending cycles at the bending radius of 6mm. Furthermore, it exhibits excellent ferroelectric fatigue resistance after suffering 106 bipolar switching cycles. Most importantly, the element shows good thermal stability in temperature range from 25°C to 100°C. All these stable ferroelectric properties indicate their enormous potential in flexible non-volatile memory devices under harsh working environment.
Published in: IEEE Electron Device Letters ( Volume: 40, Issue: 6, June 2019)
Funding Agency:
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China
School of Microelectronics, Xi’an Jiaotong University, Xi’an, China