Flexible Lead-Free BaTiO3 Ferroelectric Elements With High Performance

High-quality epitaxial (111) BaTiO
₃
thin film was successfully fabricated on flexible fluorophlogopite mica substrate by radio frequency magnetron sputtering. The flexible BaTiO
₃
thin-film element shows observably stable ferroelectric properties with the bending radius of 4 mm and well-mechanical fatigue resisting performance with 10
⁴
bending cycles at the bending radius of 6mm. Furthermore, it exhibits excellent ferroelectric fatigue resistance after suffering 10
⁶
bipolar switching cycles. Most importantly, the element shows good thermal stability in temperature range from 25°C to 100°C. All these stable ferroelectric properties indicate their enormous potential in flexible non-volatile memory devices under harsh working environment.