Temperature-Dependent Gate-Induced Drain Leakages Assessment of Dual-Metal Nanowire Field-Effect Transistor—Analytical Model

In this paper, an analytical model has been proposed to evaluate the effect of temperature on gate-induced drain leakages (GIDL) in a dual-metal nanowire field-effect transistor. Surface potential, electric field
${E} _{z}$
, and GIDL current
${I}_{\text {GIDL}}$
have been formulated and analyzed by solving 2-D Poisson’s equation with appropriate boundary conditions. The calefaction effect has also been inspected for potential and hole concentration contour plot along with in depth analysis of conduction band energy and valence band energy. Drain-induced barrier lowering and electron velocity have also been examined. Furthermore, the effect of temperature on
${g} _{m}$
,
${g} _{d}$
, noise figure, and noise conductance has also been examined.