Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents

Tunneling field-effect transistors (TFETs) have been proposed as energy-efficient switches for low-power integrated circuits. In this letter, we present the first reconfigurable black phosphorus vertical TFET. The device exhibits a record high ON-current (I
_ON
) among all 2D TFETs of 15.2 μA/μm at V
_DS
= -1 V and asubthreshold swing(SS) of 187 mV/dec at V
_DS
= -0.3 V. By tuning the electrostatic doping with multiple gates, the device can be reconfigured to operate in the TFET mode or the MOSFET mode and can be tuned to behave like an n-type or p-type FET. Moreover, negative differential resistance (NDR) is observed in the forward bias of the TFET at room temperature, providing unambiguous evidence of band-to-band tunneling in our devices.