A Novel One-Transistor Active Pixel Sensor With In-Situ Photoelectron Sensing in 22 nm FD-SOI Technology

For the first time, a novel active pixel sensor (APS) with 22 nm fully depleted silicon-on-insulator (FD-SOI) technology is experimentally demonstrated. The APS in-situ integrates photo sensing, charge integration, buffer amplification, and random access in one transistor without charge transfer and assistance of additional transistors. The deep depletion effect in the substrate of the SOI MOSFET is used to collect photoelectrons which are then sensed by the top Si channel. A sensor array is proposed and high sensitivity is experimentally verified in a simplified circuit.