Design and Numerical Analysis of Efficient Gallium Arsenide Solar Cell with Graphene as Window Layer Material

Different semiconductor materials are used to design solar cell and among them, Gallium Arsenide (GaAs) has currently more preferable causes it has several unique properties such as flexibility, the wider and direct band gap of 1.42 eV, light weighted with a low-temperature coefficient. The photon absorption constant is higher in its so can easily trap the photons more efficiently which in turns increases the efficiency of the solar cell and its' temperature coefficient is low and show better performance at low light. Because of these properties, GaAs has obtained a good position in thin film photovoltaic cell in the market. Graphene is used as the window layer in GaAs solar cell in research work that was simulated by using numerical analysis. A structure of n-type Graphene with p-type GaAs absorber layer is designed by lower volume of material which contains more economic in present status. In this case J
_sc
, FF and V
_oc
have been observed with 15.17% conversion efficiency has been found from the structure of Graphene with GaAs solar cell. Additionally, the performance has been found for the proposed model where increases the temperature decreases the normalized efficiency and it is around -0.031%/°C.