A Compact, Wideband, and Temperature Robust 67–90-GHz SiGe Power Amplifier With 30% PAE

This letter presents the design of a compact, wideband, and high-efficiency E-band power amplifier, integrated in a 0.13-μm BiCMOS process and occupying 0.3 mm
²
. It consists of a single-stage balanced amplifier, with HBT transistors in cascode configuration. The power amplifier (PA) is biased in class AB, with a dc consumption of 156 mW. A compact bias circuit is employed to achieve temperature robustness, while the layout is optimized for wideband and highly efficient operation. Measurements show a peak power gain of 15.3 dB at 83 GHz, with a 29.3% fractional bandwidth and less than 1-dB degradation over a 25 °C-85 °C temperature range. The peak output power at saturation and 1-dB compression is 18.6 and 13.6 dBm, respectively, and the maximum power-added efficiency (PAE) is 30.7%.