Electro-thermal coupled analysis of MOSFET under IEMI

Analysis of MOSFET under intentionally electromagnetic interferences (IEMIs) has been taken by using the self-developed electro-thermal software since this external interferences have been blamed for unexplained breakdowns and burnouts of many vulnerable electronic circuits and systems. This paper focused on the thermal effects of MOSFET affected by IEMIs. The physical mechanism of the heat source in MOSFET are numerical studied by the simulation based on drift-diffusion model (DDM) which coupled with thermal response of carriers. The generation and diffusion of heat inside the device are discussed. The simulation results can be applied in damage mechanism analysis and harden designs of circuits against the IEMI and other external electromagnetic interferences.