Crystal silicon quantum layers

Summary form only given. We have prepared thin c-Si layers surrounded by thermal oxide from SIMOX substrates and from crystallized a-Si:H layers grown by plasma-enhanced chemical vapor deposition of silane. These latter layers were crystallized by annealing to 1000 C in flowing Ar. This produces device-quality Si-SiO/sub 2/ interfaces with low defect densities. The thickness of the layers was determined from reflection spectra. The photoluminescence (PL) behavior of the layers was investigated with nm cw excitation which produced the same broad spectrum peaked in the near infrared between 750 and 780 nm.