Development of an Algorithm for Calculation the Energy Behavior of Impurity in Silicon

This paper describes an algorithm for solving the prognostic problem of increasing the thermal stability of silicon by metal-chemical doping. Using the system of non-polarized ion radii of E.V. Prikhodko and calculations of the binding energy at dissolution of simple substances in silicon, it was shown that the pair interactions in double silicon systems with transition metals have the highest binding energies. Therefore, transition metals when dissolved in silicon contribute to its thermal stability by increasing the strength of interatomic bonds in the crystal lattice of the solid solution.