Separation of bulk and interface contributions by optical second harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure

Summary form only given. In the current work we have fully separated these three contributions and their corresponding spectra for the first time, to our knowledge, by performing electromodulated SH spectroscopy on a Si(001) metal-oxide-semiconductor (MOS) structure. The relatively simple tensorial decomposition of nonlinear electroreflectance (NER) at Si(O01) interfaces permits full separation of the three contributions through their contrasting dependence on applied bias and sample azimuthal orientation.