Finite element modeling on electromigration of TSV interconnect in 3D package

Through silicon vias (TSV) are very important components in 3D integrated circuits, because they are responsible for the vertical connection inside the package. In this paper, a finite element model on electromigration is established to investigate the mass diffusion phenomenon for TSV interconnect in 3D stacked structure. Electric-thermo-mechanical coupled analysis is carried out to obtain the current density, temperature and stress distribution of TSV structure under high current density load. Atomic flux divergence is calculated By ANSYS APDL to evaluate electromigration failure of TSV structure. The different migration effects in the electromigration modeling of the TSV structure is also discussed.