MBE Growth and Device Applications of Ga2O3

Gallium oxide (Ga
₂
O
₃
) has gained increasing attention due to its excellent material properties and the availability of economical device‐quality native substrates. This chapter illustrates various Ga
₂
O
₃
technologies based on molecular beam epitaxy (MBE)‐grown materials. Following a general introduction to Ga
₂
O
₃
that reviews basic material properties and features, electronic device applications and melt growth technologies of bulk single crystals, MBE growth technologies and kinetics of Ga
₂
O
₃
epitaxial layers are discussed. Material properties of Ga
₂
O
₃
‐based thin films and heterostructures grown by MBE are also introduced. The fabrication and performance of state‐of‐the‐art Ga
₂
O
₃
transistors on MBE‐grown epitaxial substrates are then described.