Comparative study of stimulated emission in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N

Summary form only given. GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. The high quantum efficiency of the LED produced by Nichia Chemical Ind. with an InGaN active layer draws a special interest on that alloy. We have measured the stimulated emission for different InGaN samples and compared the determined threshold with those for GaN and AlGaN samples. The samples were grown by a MOCVD system.