Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

Non-uniform switching parameters and hard breakdown caused by excessive oxygen escape are the main issues that impede the development of SiO
_x
-based resistive-switching random-access memory (RRAM). In this letter, low-oxygen-escape Pt/Ti/Li
_x
SiO
_y
/Pt (Pt/Ti/LSO/Pt) resistive switching devices were studied systematically, where oxygen escape was mitigated by the application of O-reservoir Pt/Ti electrode. Compared with the Pt/Ti/SiO
_x
/Pt devices, the Pt/Ti/LSO/Pt devices show high uniformity, low switching voltages (<2 V), and excellent high-temperature stability even at 280°C. Furthermore, fast programming speed (<10 ns) and reliable endurance (>10
⁹
) were demonstrated. These results demonstrate the possible application of low-oxygen-escape configuration for the SiO
_x
-based RRAM development.