Cavity length dependence of gain and linewidth enhancement factor of high-speed 1.55 /spl mu/m MQW laser diode measured from spontaneous emission spectrum

Summary form only given. The multiquantum-well structure was grown by metal organic vapor phase epitaxy (MOVPE) with InGaAs well layers (30 A thickness) and commensurated 1.24-/spl mu/m InGaAsP-barrier layers (100 A thickness). The semiconducting InP was used for the current blocking layer. The spontaneous emission from the side-wall was measured with optical-multichannel analyser. The gain was calculated from the spontaneous emission spectra.