In-depth Analysis of Characteristics for an Edge Disordered Sub-10 nm Armchair Graphene Nanoribbon Field Effect Transistor

Graphene nanoribbon is a probable alternative in observing transistor behavior due to its semiconducting properties. One of the fruitful investigations in transistor research is I-V characteristics by using proper bias voltage, in presence of capacitance. In this paper, we will observe the I-V characteristics of Armchair Graphene Nanoribbon (AGNR) by considering the quantum as well as the classical capacitance for two different sizes of AGNR which are 5.04nm and 10.20nm. These two cases will eventually help us concluding a valuable decision in sub-10 nm range based device analysis.