A High-Speed Si-Based Power Transistor With Bipolar-Assisted Gate Discharging Behavior

This letter presents a novel super junction (SJ) device integrated with an on-chip bipolar junction transistor (BJT) connected between the gate and the source. This parallel path through the BJT to discharge the gate of the SJ device reduces its switch-off time by 26%. It also raises the human-body model electro-static discharge failure threshold from 1.5 to 2.3 kV for the same chip size. In addition, gate voltage oscillation during the switch-off transient is effectively suppressed.