FinFET-based Monolithic 3D+ with RRAM Array and Computing in Memory SRAM for Intelligent IoT Chip Application

We report heterogeneously integrated sub-40nm epi-like monolithic 3DIC with vertical ReRAM and memory computing (NMC) circuit. High driving current multi-channel UTB-MOSFETs (3.3/1.4 mA/μm for N/P FETs) was realized by low thermal budget super-CMP-planarized visible lasercrystallized epi-like Si channel and CO
₂
far-infrared laser annealing (CO
₂
-FIR-LA) activation technologies that enable driving 20nm 4-layer vertical ReRAM (Set/Reset <;1.2V/1.8V, 3-bits/cell). Furthermore, the ultra-low threshold voltage of NC-FinFETs and the differential output of SRAM readout enable 50+% area reduction in the near-memory computing circuitry. The unique TSV-free monolithic 3D
⁺
IC process provides the superiority in 3D hetero-integration to realize low cost, small footprint, fully functionalized 3D IoTs chip.