Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs

Monolithic 3D (M3D) integration with III-V compound semiconductor (e.g., InGaAs) offers many advantages of reduced power consumption, footprint and enhanced performance and various functionality such as RF, imager, and Micro LED [1] [2] [3]. These advantages of M3D are often counterbalanced by persistent challenge of self-heating during device operation. A M3D system stacks multiple ultra-thin channels vertically. These thin-layers and thermally resistive inter layer dielectric impede fast heat dissipation, thereby compromising performance/reliability due to self-heating [4], [5] (Fig. 1). Specifically, heat dissipated at the drain-edge must propagate through thermally-resistive ultra-thin S/D extension regions even before it reaches the contacts. The contact resistivity creates another electro-thermal bottleneck of the system [6]. Therefore, thermally conductive contact design is very important for InGaAs-on-insulator (-OI) MOSFETs.