Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy

Radio-frequency magnetron sputtering method enables us to deposit a layered $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ film on a large-area silicon substrate. However, mobility of the sputtered $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ film has not yet reached the level of other deposition methods. In this study, particle energy is controlled during the sputtering process to enhance the mobility of $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ film. As a result, it is possible to obtain the high Hall-effect mobility of $46 [\mathrm {c}\mathrm {m}^{2}/\mathrm {V}\mathrm {s}]$ and the low carrier concentration of $10^{16} [\mathrm {c}\mathrm {m}^{-3}]$ even just after the $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ sputtering process.