A highly sensitive photodetector based on deepdepletion effects in SOI transistors

This work reports a transient effect found in silicon-on-insulator (SOI) substrates, where the current of the transistor changes slowly under a back-gate voltage pulse. We show via TCAD simulation that the operating principle arises from deep depletion in the SOI substrate. This effect is further used for photodetection with extremely high 7.3×10
⁶
responsivity and signal read-out without need for charge transfer.