Threshold Dependence of Soft-Errors induced by α particles and Heavy Ions on Flip Flops in a 65 nm Thin BOX FDSOI

IoT devices are usually driven by battery and are hard to be rebooted. Leakage current must be minimized by using high-threshold transistors. We evaluated soft-error tolerance depending on threshold voltage of transistors by α particle and heavy ion irradiation. Two chips are exposed, one is general purpose (GP) transistors and the other is low-power (LP) transistors in a 65 nm Fully-Depleted Silicon On Insulator (FDSOI) process. LPDFFs (DFFs with LP transistors) were 3051x stronger against soft errors than GPDFFs (DFFs with GP transistors) by α particle. There were a few errors on LPDFFs. The measurement results by heavy ions also reveal the average Cross-Sections (CSs) of the LPDFFs are 50% and 54% smaller than those of GPDFFs.